Semiconductor device

Abstract

Abstract PURPOSE:To prevent production of Si nodule in an Al-Si layer, by providing an interconnection layer to be contacted with a silicon substrate, the interconnection layer consisting of a silicide layer formed on the exposed surface of an Si substrate, an Al-Si alloy layer thereon and a Ti or Ti compound layer formed thereon. CONSTITUTION:An Si substrate 10 includes a diffused layer 11 and an insulating layer 12 having an aperture corresponding to the diffused layer. A silicide barrier metal layer 21 is formed of Mo-Si so as to cover all over the surface. An Al-Si layer 22 containing 1-2% Si is provided over the Mo-Si layer 21. A cap layer 23 of a Ti compound such as titanium nitride or the like is formed all over the Al-Si layer 22, by means of a low-temperature technique such as sputtering or the like. Thereby, it is possible to prevent production of Si nodule and hence deterioration of lifetime due to electromigration of the Al-Si layer 22.

Inventors

• 👤 Toshio Taniguchi

Bibliographic Details