Manufacture of device having superconductive thin film

Abstract

Abstract PURPOSE:To prevent deterioration in characteristics of an oxide based superconductive thin film without adverse effects on other devices, by introducing oxygen into a thin film by plasma oxidation treatment. CONSTITUTION:A substrate 11 comprises yttria stabilized zirconia. A Y1Ba2Cu3 O7-delta thin film 12 is patterned by a photolithography method. After an aluminum film 14 is deposited, a resist layer 13 and the aluminum film 14 are patterned in an oxygen gas atmosphere by an RIE method. At this stage, the exposed surface of Y1Ba2Cu3O7-delta becomes a state, wherein oxygen is lost. Then, plasma treatment is performed in a cylindrical plasma reactor before the evaporation of gold under the following conditions: oxygen gas pressure of 1Torr normal temperature; 200W; and 15 minutes. After the gold is evaporated, the resist layer 13 is dissolved with acetone. The material is lifted off, and a gold pattern 15 is obtained on the Y1Ba2Cu3O7-delta thin film 12. Finally, oxygen plasma treatment is performed again under the same conditions described above. Thus, the Y1Ba2Cu3O7-delta thin film without deterioration in critical temperature is obtained.

Inventors

• 👤 Yasutaka Tamura
• 👤 Akira Yoshida

Bibliographic Details