Plasma processing

Abstract

Abstract PURPOSE:To remove residual products in a chamber effectively after a plasma treatment, by introducing different gases for decomposing residual products in the plasma treatment into the chamber, and performing first and second decomposition reactions by plasma discharge. CONSTITUTION:When the forming reaction of an insulating film is finished, a wafer 4 is taken out of a chamber 2. Thereafter, self-cleaning gases (CF4 and O2) and introduced into the chamber 2 by specified amounts from gas supply sources S3 and S4. Plasma is discharged, and the decomposition reaction of the material of the insulating film is made to progress. Thus, the first decomposition reaction is carried out. Then, a gas (O2) for second decomposition reaction is introduced into the chamber 2 by a specified amount, and the plasma is discharged. Then, the intermediate reaction body in the first decomposition reaction, which remains in the chamber 2, and secondary reaction products are decomposed and exhausted. In this way, all the residual products in the chamber 2 can be effectively removed.

Inventors

• 👤 Yutaka Ito
• 👤 Hiroyuki Shida

Bibliographic Details