Semiconductor laser array device

Abstract

Abstract PURPOSE:To form optically independent lasers to be close to each other by bending a common active layer of two or more transverse junction stripe lasers formed on the same substrate. CONSTITUTION:After a current-blocking layer 20 has been formed on a substrate 1, a clad layer 2, an active layer 17, a guide layer 27, a first diffraction grating and a second diffraction grating 18, 19 are grown in succession. Then, after P<+> diffusion regions 21 and P regions 22 have been formed by diffusing an impurity, electrodes 9, 10 are formed and a first transverse junction stripe laser and a second transverse junction stripe laser (hereinafter called 'TJS-LD') 23, 24 are formed. If different electric currents are impressed on these TJS-LD's 23, 24 via two electrodes 9, electrically independent laser beams are oscillated in oscillation regions 25, 26. Because the active layer 17 is bent in a U-shape, the laser beams are separated optically.

Inventors

• 👤 Toshitaka Aoyanagi
• 👤 Yutaka Nagai

Bibliographic Details