Ferroelectric liquid crystal element

Abstract

Abstract PURPOSE:To obtain a ferroelectric liquid crystal element having sufficiently high bistability and causing no short-circuit between an upper electrode and a lower electrode by forming a layer of a specified inorganic oxide on at least one electrode of a pair of substrate. CONSTITUTION:A short-circuit preventing layers 13a, 13b having 1-10<5>OMEGA/cm<2> resistance and >=4H pencil hardness and orientation controlling layers 14a, 14b having <=400Angstrom film thickness or having 10<14>-10<5>OMEGA.cm specific resistance are built in layers on transparent electrodes 12a, 12b of In2O3 or ITO (indium tin oxide), etc. The short-circuit preventing layers 13a, 13b are oxide layers such as SnO2 film, TiO2 film obtd. by a dry film forming method or a film obtd. by coating a soln. of tin acetonate and calcining thereafter, having pref. 100-3,000Angstrom film thickness. By this constitution, a ferroelectric liquid crystal element having sufficiently high bistability in switching operation in a pulse electric field, causing no short-circuit between an upper electrode and a lower electrode, is obtd.

Inventors

• 👤 Yukio Haniyu
• 👤 Yutaka Inaba
• 👤 Akira Tsuboyama
• 👤 Akio Yoshida

Bibliographic Details