Semiconductor device

Abstract

Abstract PURPOSE:To prevent the generation of troubles caused by stress and migration by a method wherein an intermediate layer, consisting of a solid-state lubricant, is interposed between a wiring and an insulating layer. CONSTITUTION:The insulating layer 2 laminated on a semiconductor substrate 1, the wiring 3 having the prescribed pattern and consisting of an Al alloy and connected to the semiconductor substrate 1 through the contact hole formed on the insulating layer 2, the intermediate layer 4 consisting of a solid-state lubricant and covering at least a part of the wiring 3, and the insulating layer 5 contacting to the intermediate layer 4 and covering the whole surface are provided on the title semiconductor device. As the solid-state lubricant with which the intermediate layer 4 is constituted, boron nitride or molybdenum disulfide, for example, can be enumerated. Also, as the Al alloy constituting the wiring, it is desirable that Cd of 0.01-0.5%, the inevitable impurities less than Cd of 0.005% or less, and the remainder consisting of Al alloy are used. As a result, the trouble caused by stress and migration can be prevented effectively.

Inventors

• 👤 Takashi Kawakubo
• 👤 Hideo Hirayama
• 👤 Hiromitsu Takeda

Bibliographic Details