Semiconductor laser device

Abstract

Abstract PURPOSE:To enlarge a front end optical emission by a method wherein the front end of a laser device is covered by a three layer coating of Si3N4 lambda/2 film, Al2O3 lambda/4 film, and SiO2 lambda/4 film. CONSTITUTION:A laser device chip 1 is provided with an Si3N4 lambda/2 film 2, Al2O3 lambda/4 film 4, and SiO2 lambda/4 film 5, and emits a beam 6 at its front end. With the front end of the laser device chip 1 being provided with a three layer coating of the Si3N4 lambda/2 film 2, Al2O3 lambda/4 film 4, and SiO2 lambda/4 film 5, the front end reflectivity is reckoned to decrease by 31-20%, increasing the front end optical output accordingly.

Inventors

• 👤 Seiji Nanbara
• 👤 Takao Katayama

Bibliographic Details