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JPS6442367A Expired / Lapsed JP ⏱️ 0.0 years remaining

Aluminum nitride sintered body

Assignee: AGC Inc
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Filing: 1987-08-07
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Granted: —
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Expires: 2007-08-07
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Abstract

Abstract PURPOSE:To produce an AlN sintered body applicable to an insulating substrate having compact structure, high thermal conduction and superior heat dissipation at low cost by incorporating AlN powders with the oxides of Y and V, and mixing the incorporated materials, and molding the mixture, then calcining the molded body under non-oxidizing atmosphere. CONSTITUTION:The aluminum nitride powders are incorporated with the oxides of yttrium and vanadium as addition agents. The suitable amounts of these addition agents are both in the range of 0.01-12wt.%. The incorporated materials are then mixed, molded, and calcined in non-oxidizing atmosphere (e.g., nitrogen gas, in vacuum). The obtained aluminum nitride sintered body is of high thermal conduction having about >=200W/m<2>.k thermal conductivity, and is also superior in electrical and mechanical characteristics, and is capable of application to high temp. materials such as a crucible, vapor-deposition vessel, etc., besides the application to thermal dissipating materials in the fields of semiconductor industry.

Inventors

  • 👤 Kazunari Watanabe
  • 👤 Keiichi Kawakami
  • 👤 Mitsuo Takahata
  • 👤 Masuo Sugizaki

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 04:55
CPC Classifications
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Claims Analysis

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References Cited (Backward Citations)

JPS62153173A Cited
JPS63288966A Cited

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