Semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device having a large degree of freedom in selecting metal species for the formation of a gate electrode, by forming a Shottky gate electrode insulated from a recess side by an insulating film. CONSTITUTION:An active layer 2, an N type high concentration layer 3, and an insulating film 4 are formed on a semi-insulating GaAs substrate 1. Next a mask 10 is formed on the surface, and a gate opening part 5 is formed in the insulating film 4. The high concentration layer 3 is penetrated by etching so that a thickness of the active layer 2 is controlled to form a recess 11. Next an insulating film 6 is formed on the whole surface. The insulating film 6 is etched to open a window 12 for a gate electrode and besides to make a sidewaII insulating film 6A on the recess side. A Shottky gate electrode 7A and a source/ drain electrode 8 are formed on the window part for the gate electrode and on the high concentration layer 3 respectively so as to manufacture a semiconductor device. The abovementioned gate metal can be also formed in processing other than evaporation, and metal species can be freely selected.

Inventors

• 👤 Kazuyoshi Ueda

Bibliographic Details