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JPS6439736A Expired / Lapsed JP ⏱️ 0.0 years remaining

Pressure contact type semiconductor device

Assignee: Mitsubishi Electric Corp
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Filing: 1987-08-05
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Granted: —
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Expires: 2007-08-05
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Abstract

Abstract PURPOSE:To reduce brazing positions, to increase the effective pressure contact area of a metal block with a semiconductor substrate and to obtain an inexpensive semiconductor device having a reduced thickness by holding the peripheral side of a semiconductor substrate, providing an insulating ring engaged with the inside of an insulating cylinder for positioning the block, and providing a metal flange engaged with the outer periphery of the block for blocking the opening end of the cylinder. CONSTITUTION:An insulating ring 21 has a recess 21a for holding compensating plates 2, 3 and a semiconductor substrate 1, and an opening 21b engaged with the stepped parts 6a, 9a of metal blocks 6, 9, and is annularly formed entirely as to be engaged within an insulating cylinder 5. Metal flanges 22a, 22b for forming upper and lower covers of the cylinder 5 are formed in a disc-shape having a diameter equal to the outer diameter of the cylinder 5. The flanges 22a, 22b are formed with stepped parts 23 engaged with the outer peripheries of the blocks 6, 9. In assembling, the flange 22b may be positioned with respect to the cylinder 5 to be assembled without requirement of positioning other members.

Inventors

  • 👤 Tokumitsu Sakamoto
  • 👤 Yuzuru Konishi

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 16:02
CPC Classifications
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