Solid-state image sensing device

Abstract

Abstract PURPOSE:To use a transfer gate as an isolation region for an adjacent picture element at the same time as the control of the transfer of a charge pattern, and to improve photosensitivity by burying the transfer gate in the direction of transfer of charges from an image sensing section for a solid-state image sensing device into a semiconductor substrate and arranging transfer channels onto both sidewalls of the buried gate. CONSTITUTION:First transfer gates 2a, 2b in the Y direction and second gates 3a, 3b in the X direction, which are crossed at right angles mutually, are formed on the light-receiving surface side of an silicon semiconductor substrate 1 for a solid-state image sensing device, and the gates 2a, 2b are buried into the substrate 1. n-type first transfer channels 6a, 6b are shaped, holding first gate oxide films 5 with the exception of a partial sidewall 4 overlapped to the orthogonal gates 3a, 3b in an upper layer on the left and right side-walls of the gates 2a, 2b buried to the substrate 1. n<-> type second transfer channels 8a, 8b are formed, holding a second gate oxide film 7 extended in a plane manner under the gates 3a, 3b. The area of a photoelectric conversion region section is increased, thus improving photosensitivity.

Inventors

• 👤 Muneo Harada
• 👤 Mitsuru Okikawa

Bibliographic Details