Method and apparatus for forming functional deposition film by microwave plasma cvd method

Abstract

Abstract PURPOSE:To efficiently prevent the deterioration of the film quality due to the discharge of an impure gas from the inner wall of a deposition chamber by heating the inner wall of the deposition chamber up to a predetermined temperature before forming a deposition film, and cooling and holding the inner wall of the deposition chamber to a predetermined temperature in the process of forming the deposition film. CONSTITUTION:A deposition chamber 101 is evacuated, and the pressure within the deposition chamber is adjusted to 1X10<-7>Torrs or less. Then, by a heater 110, the inner wall 109 is heated and held to a predetermined temperature. At this time, the degree of vacuum and temperature are high vacuum and high temperature as compared with the formation of the deposition film, and the longer the better for the heating time, but it is particularly preferable to be held at 150 deg.C or higher. Then, the temperature of the base is heated and held to a temperature suitable for the film deposition by an internal heater for heating the base, and simultaneously therewith, a coolant for cooling is made to flow in a cooling pipe 111 to cool and hold the inner wall 109 of the deposition chamber to a predetermined temperature. At this time, the lower the better for the temperature of the inner wall 109 of the deposition chamber as compared with the temperatures at the times of heating and deposition of the deposition film, but it is particularly preferable to be held at 50 deg.C or lower.

Inventors

• 👤 Itaru Yamazaki

Bibliographic Details