Manufacture of integrated circuit device

Abstract

Abstract PURPOSE:To reduce an interval between a first conductor and a second conductor down to nearly a size of an overhang by a method wherein a spacer formed on the first conductor is shaped like the overhang by being made fluid and the second conductor is formed via the spacer. CONSTITUTION:A thermal oxide film (SiO2) 2 and an Si3N4 film 3 are grown on a face to be processed of a semiconductor substrate 1 by an LPCVD operation; then, Au 4 is evaporated. Then, PSG (phosphorus glass) 5 is grown by a normal-pressure CVD operation; the first Au is patterned by a photolithographic operation. Then, this assembly is heat-treated in an atmosphere of N2 at 800-1000 deg.C; the PSG 5 is made fluid; a desired overhang shape is realized. Then, second Au 6 is evaporated. Then, the PSG is removed by using a chemical which is composed mainly of HF; at the same time, the second Au 6 is lifted off on it. Then, the unnecessary Au 6 is removed by a second photolithographic operation.

Inventors

• 👤 Fumihiko Goto

Bibliographic Details