Manufacture of field-effect transistor

Abstract

Abstract PURPOSE:To satisfy both a low parasitic resistor with a bilateral asymmetric bored opening section and high drain breakdown strength by forming a gate electrode into an opening region obtained by removing a high-concentration N-type GaAs layer through an isotropic dry etching method from the oblique direction to the surface. CONSTITUTION:A gate electrode metal is applied into an opening region acquired by removing a high-concentration N-type GaAs layer 6 through an isotropic dry etching method from the oblique direction to the surface, and a gate electrode 11 is shaped through a lift-off method. Consequently, since the layer 6 is dry-etched in an isotropic manner from the oblique direction, side etching to a mask pattern asymmetrically progresses, thus displacing the center point of the lower section of a recess to the center point of the mask pattern. Evaporating beams are projected vertically to the mask pattern and the gate electrode is formed, thus shortening the distance of a bored opening section between a source and a gate, then lengthening the distance of the bored opening section between the gate and a drain.

Inventors

• 👤 Masayoshi Kobayashi
• 👤 Masao Yamane
• 👤 Yoshimitsu Sasaki
• 👤 Susumu Takahashi

Bibliographic Details