Etching device

Abstract

Abstract PURPOSE:To conduct etching having high anisotropy at high speed by forming a high-frequency electric field between a wafer and an upper plate by a high-frequency power and shaping a microwave electromagnetic field in the upper space of the wafer. CONSTITUTION:A magnetic field coil 14 is conducted for generating electrocyclotron discharge, and a magnetic field having 875 Gauss is generated at a certain position in the upper section of a sample base 6. When the sample base 6 is supplied with power through a high-frequency power 9 and a capacitor 10, discharge is generated between the sample base 6 and an upper plate 16, and an ion sheath having a certain potential is generated on the sample base 6. Ions are accelerated by the potential, but ion energy at that time is approximately proportional to high-frequency power. Consequently, a large number of ions are acquired by small power. Accordingly, etching having high anisotropy is performed at high speed.

Inventors

• 👤 Naoyoshi Fujiwara
• 👤 Kotaro Hamashima
• 👤 Masanobu Nakano

Bibliographic Details