Semiconductor laser array element

Abstract

Abstract PURPOSE:To ease flattening of an active layer as well as enable a stable oscillation operation by forming a second conductive type semiconductor layer having a plurality of second grooves formed on the whole surface thereof on a first conductive type semiconductor substrate having a plurality of first grooves formed on the whole surface thereof and allowing only the groove corresponding to a light emitting region of the active layer among the second grooves to reach the semiconductor substrate. CONSTITUTION:A p-type GaAs semiconductor substrate 1 includes thereon a mesa A2, and mesas B3 and C4, both having the same configuration and period but shifted a half period at a boundary 5 as those of the mesa A2 at portions except the portion where the mesa A2 is existent. Thereafter, an n-type Al0.1Ga0.9As current constriction layer 6, an n-type Al0.1Ga0.9As etching back preventing layer 7, and an n-type GaAs surface protective layer 8 are grown on the above mesas on the substrate. Grooves 9 are formed over the whole surface on the flattened substrate. Here, the grooves 9 corresponding to an oscillation part 14 are formed so as to correspond the flattened part of the mesa A2. As a result, the bottom of the grooves 9 corresponding to the oscillation part 14 reach the p-type GaAs semiconductor substrate 1, thus 1 forming a current path. On the other hand the bottoms of the other grooves 9 do not reach the same substrate 1, thus preventing a current path being formed.

Inventors

• 👤 Taiji Morimoto
• 👤 Hiroyuki Hosobane
• 👤 Akihiro Matsumoto
• 👤 Mototaka Tanetani
• 👤 Kaneki Matsui

Bibliographic Details