Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce the generation of gate failures, by performing the connection to FET after a diode is subjected to a specific inspection in a wafer stage of a vertical type MOSFET having a gate protecting diode. CONSTITUTION:By forming a gate oxide film 4 on an Si substrate 1 forming a drain, and forming a source region 8 on the surface part of the substrate 1, a vertical type MOSFET 20 is formed. By forming an N<+> doped poly-Si region 9 and a P-doped poly-Si region 10, a gate protecting diode 30 is formed. Before the source region and the protecting diode are connected, the protecting diode part is subjected to characteristics inspection for gate breakdown voltage screening. After this inspection, a source electrode 11 and a diode side electrode 12 are electrically connected by using a wire 13.

Inventors

• 👤 Tetsuo Iijima
• 👤 Shigeo Otaka
• 👤 Takeaki Okabe
• 👤 Isao Yoshida

Bibliographic Details