Formation of thin film

Abstract

Abstract PURPOSE: To form a surface oxide layer in an excellent reproducible manner, to prevent the generation of moisture absorbing property, and to remove the variation by aging of the property of a film by a method wherein a surface oxided film is formed in an excellent reproducible manner by oxidizing the surface of an AlN film. CONSTITUTION: An ion implantation layer 12 is provided on a semiconductive GaAs substrate 11, and an AlN thin film 13 is formed on the surface of the implantation layer 12. Then, a wafer is heat-treated in a humidified oxygen or nitrogen gas atmosphere, and when AlN surface is oxidized, an oxide layer 131 is formed on the surface of AlN. Then, when heat treatment is conducted in a non-heated oxygen gas or nitrogen gas, said oxide layer 131 is degenerated into a strong oxide layer. Subsequently, the implantation layer 12 is activated, and a multilayered thin film is obtained. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Yoshinari Matsumoto

Bibliographic Details