Manufacture of quantum fine line laser diode of current-injection type having buried structure

Abstract

Abstract PURPOSE:To obtain a current-injection semiconductor laser having a reduced spectral width, by depositing a lower clad layer on III-V compound semiconductor crystals, forming linear ridges thereon and further depositing, on the ridges, a lower graded layer, a quantum well layer, a barrier layer, an upper graded layer, an upper clad layer and a contact layer. CONSTITUTION:A lower clad layer 6 is epitaxially grown on the surface having crystallographic plane orientation (100) or equivalent thereto, of substrate crystals 1A of a III-V compound semiconductor. On this lower clad layer 6, there are formed linear ridges having side walls whose planes are of crystallographic plane orientation (01-1) and (0-11) or equivalent thereto. Then, there are deposited a lower graded layer 7, at least one quantum well layer 8, at least one barrier layer 9, an upper graded layer 10, an upper clad layer 12 and a contact layer 13 by crystal growth subsequently in that order. The quantum well layer 8 on the linear ridges for example is used as an active layer for a laser diode.

Inventors

• 👤 Yutaka Omori
• 👤 Akiyuki Tate
• 👤 Morio Kobayashi

Bibliographic Details