Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To reduce a parasitic capacity and to obtain an element isolation region of a favorable shape by burying a polycrystalline silicon film containing oxygen in an element isolating silicon groove. CONSTITUTION:A P-type Si substrate 101 is thermally oxidized to form an Si oxide film 102, an Si nitride film 103 is formed thereon, and a photoresist film is selectively so formed as to expose a place to be formed with an element isolation region. With the photoresist film as a mask the films 103, 102 and the substrate 101 are etched to form grooves 105, an impurity is ion implanted to form a P<+> type region 106 in the bottom of the groove 105. Then, a resist film is removed, the groove 105 is thermally oxidized to form an Si oxide film 108, a polycrystalline silicon film 107 containing oxygen is grown on the whole surface including the film 108, the film 107 is so etched as to expose the film 103, and the exposed part of the film 107 is oxidized. Thereafter, the film 103 is removed, the film 102 is so removed at the region except the groove 105 until the substrate 101 is exposed to obtain an element isolating region.

Inventors

• 👤 Hideki Gomi

Bibliographic Details