Non-volatile memory

Abstract

Abstract PURPOSE:To obtain a non-volatile memory possible to be housed in a package without having a window for the irradiation of an ultraviolet ray, by enabling the floating gate of a memory transistor to be connected to prescribed potential via a switch, and emitting electrons accumulated in the floating gate. CONSTITUTION:In a state where information (1) is stored in the memory transistor TRQ1, namely, the electron is accumulated in the floating gate 4a, an EPROM is operated under a room temperature, and also, since a superconductor 10a is provided with high resistivity in the neighborhood of the room temperature, no leakage of the electron accumulated in the gate 4a is generated. Next, the EPROM is cooled by setting a wiring 9a at the prescribed potential exceeding 0V. When a temperature decreases less than a certain temperature, the superconductor 10a shows a superconductive characteristic or the resistivity is lowered. Thereby, the electrons accumulated in the floating gates in all of the memories TR can be discharged to the wiring 9a side that is the ground potential passing through the superconductor 10a.

Inventors

• 👤 Hiroshi Miyamoto

Bibliographic Details