Semiconductor light emitting element

Abstract

Abstract PURPOSE:To increase a current injection amount and to enhance light emitting efficiency by using a heterojunction of a preferable group III nitride as a light emitting unit, i.e., a light emitting layer and a current injection layer. CONSTITUTION:An Al0.20Ga0.21In0.59 N-type current injection layer (clad layer) 2 of 53mum, a Ga0.43In0.57 N-type light emitting layer 3 of 0.5mum, a current injec tion layer and Au electrodes 4, 5 for the light emitting layer are provided on a sapphire substrate 1. The current injection layer is formed of an N-type low resistance, and the light emitting layer is doped with Zn as a high resistance. When a voltage is applied with the electrode 5 as a positive side, carrier is injected to a GaInN light emitting layer, thereby emitting a blue color of approx. 4800nm. Carrier flows also to an AlGaInN current injection 2, but band gap difference is approx. 0.4eV, reactive current is reduced by the effect of band discontinuity, thin to 0.5mum, and a light is emitted in high efficiency of 1% of external quantum efficiency even with the low resistance light emitting layer as compared with a conventional one.

Inventors

• 👤 Hidenao Tanaka
• 👤 Takashi Matsuoka
• 👤 Kunishige Oe

Bibliographic Details