Solid-state image sensing device and manufacture thereof

Abstract

Abstract PURPOSE:To reduce the occurrence of a smear phenomena, and restrain the occurrence of dark time output irregularity, by covering not only the upper parts but also the side parts of a first and a second transfer electrodes with a light shielding film, in order to prevent the incidence of oblique light, and forming an insulating film containing hydrogen in a manner in which the film covers the whole surface without generating step-cut. CONSTITUTION:A thermal oxide film 8 is formed on the whole surface of a semiconductor substrate 1. On a part of the thermal oxide film 8 corresponding with a charge transfer part, a first transfer electrode 9 is formed, on which a second transfer electrode 11 is formed via an insulating film 10. Further, an insulating film 12 is formed by CVD method. The insulating films 10, 12 on the sides of the first and the second transfer electrodes 9, 11 are etched and eliminated as far as a part quite close to an N<+> impurity region 4 as a photoelectric conversion region. Next, an insulating film containing a large amount of hydrogen, e.g a plasma nitride film 13, is deposited on the whole surface. On the plasma nitride film 13 on the upper parts and the side parts of the first and the second transfer electrodes 9, 11, a light shielding film 14 composed of, e.g. and Al layer, is formed as far as a part quite close to an N<+> impurity region 4 as a photoelectric conversion region.

Inventors

• 👤 Nobuo Suzuki
• 👤 Katsumi Shiiki

Bibliographic Details