Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent a property of a bump from deterioration and the like by a method wherein an opening is provided to an electrode pad through the use of a photoresist film of the thickness larger then the height of a bump, a bump of the height smaller than the thickness of the photoresist film is formed inside the opening and an acid- resistant metallic film is provided. CONSTITUTION:An electrode pad 3 is provided on a substrate 1, an interlaminar insulat ing film 4 is formed thereon and is selectively subjected to etching so as to provide an opening 5 on the pad 3. Next, a Cr layer 6 and a copper layer 7 are deposited on the surface which contains the opening 5 so as to improve the adhesive property between a barrier material and a pump. And, a photoresist film 8 whose thickness is larger than the height of the bump is provided on the copper layer 7 and subjected to patterning for the formation of an opening 9 slightly larger in size than the opening 5, and bump 10 whose height is smaller than the thickness of the film is formed inside the opening 9 in such a way as a copper layer is deposited on the layer 7 through electroplating by the use of layers 6 and 7 as electrodes. Next, an opening 11 larger in size than the opening 9 is provided and the layer 7 is subjected to etching through the bump 10 and the like used as a mask and a process follows, where a metal 13 is formed through the film 12 as a mask, and consequently a semiconductor with a bump can be obtained.

Inventors

• 👤 Yoshiyuki Hirano
• 👤 Yasuhiko Iwamoto

Bibliographic Details