Semiconductor device

Abstract

Abstract PURPOSE:To prevent the generation of electromigration and disconnection, etc. due to voids by forming wiring structure in three layer structure and shaping an intermediate layer by a metallic layer consisting of Ti, Ta, etc., and upper and lower layers by alloy layers composed of Al, Si and Ti. CONSTITUTION:A lowermost layer 5 and an uppermost layer 7 in a wiring layer 4 are formed by the component of a composition made up of Si atoms kept within a range of 2 wt.% or less and Ti atoms kept within a range of 0.05-0.15 wt.% and Al atoms as the remainder, and they are 0.3-0.7mum thick. An intermediate layer 6 shaped onto the lowermost layer 5 is formed by the metallic layer of Ti and Ta or the alloy layer of TiN, and thickness thereof is shaped in 500-1000Angstrom . Since the intermediate layer in the wiring layer is formed by the metallic layer or the alloy layer having a resistance value far higher than those of the uppermost layer and the lowermost layer, thus reducing the probability of the generation of accidents such as electromigration at the same positions in all three layers, then acquiring a semiconductor device having high reliability.

Inventors

• 👤 Haruyoshi Yagi
• 👤 八木　春良

Bibliographic Details