Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make it possible to carry out manufacturing characterized by high accuracy and excellent shortening of production process, by forming an oxidation resisting film on a substrate, forming a specified groove, expanding the groove after patterning, forming an oxidation resisting film on the entire substrate including the inside of the groove, forming resist thereon, removing it in the anisotropic direction, and removing the exposed oxidation resisting film. CONSTITUTION:A base oxide film 2 is formed on a silicon nitride film 3. A silicon nitride film 1 is formed thereon as an oxidation resisting mask. Then a desired groove 4 is formed by etching through a mask of an oxide film and the like. The inside of the groove 4 is oxidized, and a silicon oxide film 5 is formed. Thereafter the silicon film 1 is patterned. When chemical etching is performed, the silicon oxide film 5 in the groove 4 and the base oxide film 2 at a part, where the silicon nitride film is removed, are removed. Then a base oxide film 6 and a silicon nitride film 7 are formed on the silicon substrate including the inside of the groove. Thereafter resist 8 is applied on the entire surface. Etching is performed by reactive ion etching 9. Then the resist 8 remains only under the overhang part of the silicon nitride film 1. Finally, the silicon nitride film 7 is removed.

Inventors

• 👤 Ikuo Ogawa
• 👤 育夫 小河
• 👤 Teruo Shibano
• 👤 芝野　照夫

Bibliographic Details