Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the reliability of wiring and to make it possible to form an multilayer interconnection, when a metallic wiring layer is formed on a substrate having contact holes and steps, by heating and fusing the metallic wiring layer, which is deposited and formed on the substrate. CONSTITUTION:The surface of a substrate 10 is cleaned with diluted fuoric acid and the like. Then a titanium nitride (TiN) film 70 having a thickness of 0.1 mum is deposited and formed by a sputtering method using Argon (Ar). Then, an Al film 80 having a thickness of 1mum is deposited on the TiN film 70 by a sputtering method using the same Ar. At the depositing and forming step of the Al film 80, the thickness of the Al film is very thin in contact holes 40 and 50. The thickness at a step part 60 is considerably thin. Said Al film undergoes heat treatment so that it is fused and made to flow. Then the insides of the contact holes are completely filled with the Al and the step part is eliminated. The flatness of the Al film 80 is strikingly improved. Thus wire breakdown is prevented, and the increase in electric resistance can be reduced.

Inventors

• 👤 Shinpei Iijima
• 👤 飯島　晋平
• 👤 Shizunori Oyu
• 👤 大湯　静憲
• 👤 Naoki Yamamoto
• 👤 直樹 山本
• 👤 Tetsuya Hayashida
• 👤 哲哉 林田

Bibliographic Details