Dry etching apparatus

Abstract

Abstract PURPOSE:To make it possible to form a highly accurate pattern without increasing high frequency power, by providing a sound wave generating mechanism for generating sound waves which are made to impact on the surface of a material to be etched with directivity so as to cross a plasma region. CONSTITUTION:High frequency power is applied on a lower electrode plate 13 from a high frequency power source 14. At the same time, a frequency of 800 kHz is applied to vibrators 18 from an oscillator 19 of a sound wave generating mechanism 17. Then, an upper electrode 12, which also serves the role of a vibrating plate, is resonated, and the similar frequency of 800 kHz is generated. The sound wave is made to impact on the surface of a wafer 20 on the lower electrode plate 13 with directivity so as to cross plasma 21. As a result, active, positive ions in the plasma 21 are generated between the electrodes 12 and 13 and accelerated by potential difference. The ions are further accelerated by the sound wave having the sharp directivity from the upper electrode plate (vibrating plate) 12. The ions become ion streams 22 having the high directivity. The ion streams are inputted in the surface of the wafer 20. Thus the surface part of the wafer 20, which is exposed from a resist pattern undergoes excellent ion etching.

Inventors

• 👤 Yasuyuki Harada
• 👤 康之 原田

Bibliographic Details