Manufacture of silicon thin film transistor

Abstract

Abstract PURPOSE:To obtain a thin film transistor with high electrical performance so as to enable effective addition of hydrogen, by forming a channel region into a plural number of fine wide silicon lines running in the direction in which a source electrode is coupled with a drain electrode, and by hydrogenating the channel region. CONSTITUTION:Surfaces of polycrystal silicon lines 14a, which are formed by the use of a plasma etching method in which a uniform polycrystal silicon thin film formed on an insulating substrate 1 is shaped into thin lines, are oxidized to form gate insulating films 15. Then, a gate polycrystal silicon layer 16a is formed. Next, a SiO2 film preventive of diffusion is formed on a channel region 14, and source and drain regions are formed by a phosphorus doping method. Next, a source electrode 2, a drain electrode 3, and a gate electrode 16 are respectively formed of Al, and hydrogen is added to the channel region 14 by the use of hydrogenation in which hydrogen contained in a nitriding film is used, hydrogen ion implantation, or the like.

Inventors

• 👤 Tatsuya Takeshita
• 👤 達也 竹下
• 👤 Takashi Umigami
• 👤 海上　隆
• 👤 Osamu Kogure
• 👤 小暮　攻

Bibliographic Details