Method of processing semiconductor element

Abstract

Abstract PURPOSE:To remove scrap layers produced by mechanical cutting completely by a method wherein both the surfaces of a semiconductor substrate are covered with resist layers and electrodes are buried and, after the one resist layer is fixed to an adhesive tape, the semiconductor substrate is out into individual elements and then the scrap layers are completely removed by isotropic etching. CONSTITUTION:Inside a GaP semiconductor substrate 1, a P-N junction is formed in parallel to the surface of the substrate 1. Electrodes 2... are formed by patterning Au layers evaporated on the surfaces of the substrate 1. After the electrodes 2... are buried by coating the surfaces of the semiconductor substrate 1 with positive resist films 3, the one surface is fixed to an adhesive tape 5. In this state, a dicing process is carried out with a blade dicer to divide the semiconductor substrate 1 into individual elements. In order to remove scrap layers produced in this process, isotropic etchant of phosphoric acid system is applied. Then the positive resist films 3 are removed by developer and, after another adhesive tape is bonded to the exposed electrodes 2, the previously bonded adhesive tape 5 is peeled off and then the remaining positive resist layers are removed.

Inventors

• 👤 Fumiaki Sato
• 👤 文明 佐藤

Bibliographic Details