Device for manufacturing semiconductor

Abstract

Abstract PURPOSE:To reduce contamination of a semiconductor substrate with reaction- produced substances by a method wherein an exhaust pipe is attached to the open end of a reaction tube, the other end of the tube is closed, the soaking space of a heating furnace is allowed to extend along the reaction tube as far as the vicinity of the open end, and an exhaust port is provided. CONSTITUTION:A reaction gas is let in through a reaction gas intake port 10 provided at the lower side of a reaction tube 8 and is discharged at the upper end 8a of a U-shape constituting a soaking space. Change in temperature is small in this region and a film formed here by reaction is uniform in its quality and, therefore, its possibility of peeling off the tube wall is low. In the vicinity of an exhaust port 9b remote from an exhaust pipe leadout port 9a, temperature is lower and variable. In this region, the film formed by reaction is uneven in its quality and, therefore, is easier to peel off the tube wall. In a device of this invention, such a region is remote from the exhaust pipe leadout port 9a, and is located at place completely isolated from a semiconductor substrate insertion opening (the open end of the reaction tube 8). It follows therefore that the possibility is quite low of adhesion to a semiconductor substrate 3 of reaction produced substances.

Inventors

• 👤 Shuichi Miyamoto
• 👤 秀一 宮本
• 👤 Kojirou Sugane
• 👤 数金　小二郎
• 👤 Noritsugu Yamada
• 👤 山田　則次

Bibliographic Details