Manufacture of semiconductor memory

Abstract

Abstract PURPOSE:To make the area of a memory small, by making a mask which is used for forming a through hole in a thick insulating film remain on a word line, which is formed by the gate electrode of a first conductor layer, and on a substrate, and utilizing the mask as an interlayer insulating film between a first capacitor electrode using the gate electrode of a second conductor layer and said word line. CONSTITUTION:A P-type layer 2 is epitaxially grown on a P<+> type Si substrate 1. An island shape is formed out of an SiO2 isolating region. The surface is covered with a thin gate insulating film 5. A gate electrode 6, which is to become a word line, is provided thereon. Then, with the electrode as a mask, N<+> type source and drain regions 3 are formed by diffusion. A thick insulating film 7 for forming a deep hole is deposited on the entire surface including the regions 3. The deep hole 8 penetrating into the substrate 1 is formed by anisotropic etching. A thin insulating film 9 is deposited on the bottom and the wall of the hole and the surface. Thereafter a photoresist film 10 is buried in the hole 8. With the films 10 and 7 as masks, the film 9 is etched and the regions 3 are exposed. A second conductor layer 11 and a second thin capacitor insulating film 12 are formed so as to cover the region 3.

Inventors

• 👤 Touhachi Makino
• 👤 牧野　藤八
• 👤 Tokuo Kure
• 👤 久礼　得男
• 👤 Yoshio Sakai
• 👤 芳男 酒井

Bibliographic Details