Method and apparatus for forming functional deposited film by microwave plasma cvd method

Abstract

Abstract PURPOSE:To form a functional deposited film having a uniform film thickness over the entire surface of a large-area substrate by apparently closing an aperture of a discharge means to a film forming chamber by a space constructing member which discharges gases smoothly and shuts off the leakage of microwaves. CONSTITUTION:A microwave reflecting member 10 having the space construction is provided to the aperture part of the discharge pipe 5 to a vacuum chamber 7 and the aperture is apparently closed. The reflecting member 10 is constituted of a metal which does not give ill effect to the deposited film to be formed during the film formation and has preferably open cell structure or open network structure having about 1mm-3.58cm diameter of the spaces. Gaseous raw materials are released in this state from an annular gas releasing pipe 8 into a plasma inducing chamber 7 and microwaves 4 are projected from an introducing window 2. The microwaves 4 are effectively reflected by the member 10 and only the gases are smoothly discharged. The film forming chamber 7 acts as a microwave resonator and the desired deposited film is stationarily and stably formed on the substrate 6.

Inventors

• 👤 Yasutomo Fujiyama
• 👤 藤山　靖朋

Bibliographic Details