Organic tunnel element

Abstract

Abstract PURPOSE:To obtain an organic tunnel element enabling both operation of switching and memory and having excellent memory characteristics by using a proton shift type organic compound for an insulating layer and arranging the proton shift type organic compound in the dircetion of an electric field generated from a pair of electrodes in the insulating layer. CONSTITUTION:A first electrode 2 is formed onto a substrate 1, an inorganic insulating layer 3 surrounding the electrode on the substrate 1 and an organic insulating layer 12 consisting of a proton shift type organic compound are shaped to the upper section of the first electrode 2 as insulating layers, and a second electrode 4 is formed to the upper section of the layer 12 so as to hold the insulating layers 3, 12 together with the electrode 2. The organic compound is oriented in the direction of an electric field, the vertical direction to the substrate, from the electrode in the insulating layer including the proton shift type organic compound. The inorganic insulating layer consisting of a material, the surface of which has hydroxyl groups and which is composed of Al2O3, etc., is shaped to the lower section of the insulating layer in order to generate such orientation, and an organic acid induced from the proton shift type organic compound is introduced to the upper section of the inorganic insulating layer, thus reacting the functional group of the organic acid with the hydroxyl group, then arranging the acid group of the organic acid in the fixed direction.

Inventors

• 👤 Fumihiro Ebisawa
• 👤 海老沢　文博
• 👤 Tsutomu Horiuchi
• 👤 勉 堀内
• 👤 Takashi Kurihara
• 👤 隆 栗原
• 👤 Hisao Tabei
• 👤 田部井　久男

Bibliographic Details