Semiconductor package

Abstract

Abstract PURPOSE:To make significantly free the selection of structure of a semiconductor package using an Al nitride ceramic sintered body and to make possible a direct bonding without previously metallizing, to enhance the reliability of an assembled part and moreover, to improve cooling characteristics by a method wherein an electrically insulating and non-oxide ceramic sintered body and its adjacent member are bonded together with a brazing metal containing at least one kind of Ti or Zr. CONSTITUTION:A high-integration density LSI chip 2 is connected to a multilayer circuit substrate 1 through solder balls 3. Heat, which passes through a high-heat conduction and electrically insulating AlN ceramic fin 7 connected on the rear of the Si chip and is generated in the Si chip 2, is transmitted to upper fins 6 being formed integrally with an AlN cap 5 of the same material as that of the fins 6. A pastelike brazing metal obtainable by adding Ti of 3% to 97% of alloy powder constituted by Ag of 72 wt. % and Cu of 28 wt. % is installed between the cap 5 and an AlN ceramic frame 4 in a thickness of 100 mum, heated and the cap and the frame are directly bonded together. The Ti-added soldered part is not quite affected by soldering. Accordingly, a semiconductor package having the sound bonded part and superior cooling characteristics can be obtained.

Inventors

• 👤 Takashi Fukumaki
• 👤 服巻　孝
• 👤 Rikuo Kamoshita
• 👤 鴨志田　陸男
• 👤 Hisanobu Okamura
• 👤 久宣 岡村
• 👤 Kyo Matsuzaka
• 👤 松坂　矯

Bibliographic Details