Transistor device

Abstract

Abstract PURPOSE:To enable radiation of heat generated from a transistor to be performed in a short time, by making cooling elements using a Peltier effect formed between a dielectric substrate and a heat dissipation plate. CONSTITUTION:Cooling elements using a Peltier effect, such as a metallic plate 9a-a P-type semiconductor 11-a metallic plate 9b are formed between a dielectric substrate 2 and a heat dissipation plate 1. Current flowing from an output lead 8 is made to flow through a metallized part 3b, a conductive matter 10, metallic plate 9b, the semiconductor 11, the metallic plate 9a to the heat dissipation plate 1. As regards dissipation of heat, the heat is forcedly absorbed by the Peltier effect in the junction part between the metallic part 9b and the semiconductor 11, and then the heat generated in the junction part between the metallic plate 9a and the semiconductor 11 is dissipated in the heat dissipation plate 1. Therefore, the dissipation of the heat generated from the transistor 4 can be performed in a short time.

Inventors

• 👤 Sukeyuki Masuno
• 👤 升野　祐之

Bibliographic Details