Vapor growth apparatus

Abstract

Abstract PURPOSE:To uniformize the thickness of a thin film by forming a passage control plate for dividing and restricting the flow of reaction gas between a reaction gas supply port and a susceptor in a reaction furnace to always maintain the flow rate of reaction gas constant. CONSTITUTION:A plurality of passage control plates 20 are provided above a susceptor 5 in a reaction furnace body 1. The plates 20 are coupled by a plurality of partition plates 22, and coupled by a supporting plate 21 with a the furnace body 1. Then, reaction gas is supplied from a supply port 9, fed downward, but in this case the flow is straightened through the plates 20 to become uniform, thereby arriving at a crystal substrate 7. Thus, the thickness of the thin film is made uniform.

Inventors

• 👤 Hideo Iwasaki
• 👤 秀夫 岩崎
• 👤 Yoshitaka Fukuyama
• 👤 佳孝 福山

Bibliographic Details