Vapor phase growth equipment

Abstract

Abstract PURPOSE:To uniformize the thickness of a thin film over the whole area by forming a slitlike diffuser for introducing gas from a supply port to a susceptor, relatively moving the diffuser and the susceptor, and obtaining a uniform and abrupt doping profile. CONSTITUTION:A gas diffuser 5 of slitlike shape for diffusing reaction gas is provided in a reaction furnace 1. A crystal substrate 4 includes a position opposed to the diffuser 5, and is composed to move in a direction designated by an arrow 6 by a driving mechanism 2. Then, gas diffused from the diffuser 5 has a uniform speed distribution longitudinally of a slit. Thus, a uniform and abrupt doping profile is obtained to uniformize the thickness of the thin film entirely.

Inventors

• 👤 Yoshitaka Fukuyama
• 👤 佳孝 福山
• 👤 Hideo Iwasaki
• 👤 秀夫 岩崎

Bibliographic Details