Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To perform a high density impurity doping on the first and the second semiconductor layers by a method wherein, after impurities have been coated on the surface of the first semiconductor layer, the second semiconductor layer is formed on the impurities, and the impurities are diffused on the first and the second semiconductor layers from between the two layers. CONSTITUTION:After an impurity coating liquid 12A has been coated on the surface of the first semiconductor layer (silicon substrate) 2, the second semiconductor layer (polysilicon layer) 10 is formed on said impurity coating liquid 12A. Then, the impurity coating liquid 12A, coated on the first and the second semiconductor layers 2 and 10 from between the two layers, is diffused. As a result, a high density doping can be made possible, and the impurity density can be increased on the region ranging from the boundary region of the first and the second semiconductor layers 2 and 10 toward the first and the second semiconductor layers 2 and 10.

Inventors

• 👤 Takanori Hitomi
• 👤 隆典 人見

Bibliographic Details