Vacuum device for forming film

Abstract

Abstract PURPOSE:To form a film onto a substrate at a good yield by projecting an electron beam to the evaporating particles from an evaporating source to ionize the particles in the position where the ionized particles do not repulse from each other before said particles arrive at the substrate. CONSTITUTION:The particles 8 are evaporated from the evaporating source 7 under about 10<-5>-10<-6>Torr to form the film on the substrate 2 supported by a substrate holder 3. A solid state electron beam generator MEB is provided near the substrate holder 3 to emit the electron beam to the evaporating particles 8. The particles 8 are then accelerated and ionized by an accelerating electrode 1. The distance from the evaporating source 7 to the substrate 2 surface, designated as L, and the distance from the evaporating source 7 up to the surface E under scanning by the electron beam, designated as (d), are so controlled as to attain 2d>L. The repulsion of the ionized evaporating particles 8 from each other is thereby suppressed and the particles are deposited on the substrate 2 at a good yield. Since there is not radiant heat to the substrate 2, the controllability of the film quality is improved.

Inventors

• 👤 Yasuhiko Ishiwatari
• 👤 恭彦 石渡
• 👤 Ryuichi Arai
• 👤 竜一 新井
• 👤 Mamoru Miyawaki
• 👤 守 宮脇
• 👤 Yukio Masuda
• 👤 増田　幸男
• 👤 Nobutoshi Mizusawa
• 👤 水澤　伸俊
• 👤 Hitoshi Oda
• 👤 織田　仁

Bibliographic Details