Semiconductor device

Abstract

Abstract PURPOSE:To improve the step coverage and to prevent the generation of microcracks by a method wherein the part vertical to the semiconductor substrate located on the side face of the contact window, with which the upper wiring and the lower wiring will be connected, is formed in a height of 200 nm or less. CONSTITUTION:A contact window is perforated on the oxide film 3a and the nitride film 3b, with which the Al wiring 2 of the lower layer on a semiconductor substrate 1 is covered, by performing isotropic and anisotropic etching respectively. Besides, a plurality of metal layers such as a Ti layer 6a, a Pt layer 6b and an Au layer 6c, with which the contact window is covered, are provided. At this point, when the film thickness (d) of the oxide film 3a is formed at 200 nm or less, at 100 nm or thereabout, for example, the height of the part vertical to the side face of the contact window is formed at 100 nm or thereabout. Accordingly, the contact window is formed into the shape with which the step coverage of the upper layer of metal layer is improved. As a result, the generation of microcracks can be prevented.

Inventors

• 👤 Hiromichi Kono
• 👤 博通 河野

Bibliographic Details