Manufacture of semiconductor device

Abstract

Abstract PURPOSE: To obtain a minute wirng pattern with use of Pt by providing the opening at electrode forming region of the insulator film coated on the semiconductor substrate, coating the laminated conducting film of Ti and Al there, drilling the concavity on the Ti film through etching and covering the concavity with the Au plating after filling with the Pt layer. CONSTITUTION: The laminated conducting film of Ti film 303 and Al film 305 is coated on the surface of semiconductor substrate 301 which contains the prescribed PN junction with insulator film 302 covering the surface except for the electrode draw-out window. Then the anode oxidation is given to grow Al 2 O 3 film 308 on the surface with photo resist pattern 306 adverse to the wir ing line provided. Using pattern 306 as the mask, film 308 and 305 are removed selectively through etching. After this, the Pt film is deposited on the entire surface to exfoliate film 308 to obtain Pt wiring pattern 304 on exposed film 303, and Au film 307 is coated on the surface of pattern 304. The unnecessary film 308 and 305 are removed through etching, and then exposed film 302 is also removed. Thus, the wiring of 3- layer structure (Ti-Pt-Au) is obtained. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Masaharu Yorikane

Bibliographic Details