Field effect transistor and manufacture of the same

Abstract

Abstract PURPOSE:To suppress hot carrier effect and avoid gm deterioration by a method wherein side walls are provided between the brim parts of a gate electrode which has an invert T-shape cross-section and a substrate and the substrate side part of the gate electrode does not overlap source and drain diffused layers. CONSTITUTION:A gate electrode 3 which has brim parts and has an invert T-shape cross-section is formed by applying plasma etching to electrode materials 3a and 3b. After an insulating film such as a silicon oxide film is formed over the whole surface with a certain thickness, the whole surface is anisotropically etched to form silicon oxide films which are called side walls 5 on the sides of the gate electrode 3. Then, high concentration source and drain diffused layers 6 are so formed as to be continuous with low concentration source and drain diffused layers 4 and not to spread over the edges of the low concentration regions to penetrate under a gate insulating film 2 to form a double diffused structure. With this constitution, an electric field near a drain is relaxed and creation of hot carriers can be suppressed.

Inventors

• 👤 Shinichi Sato
• 👤 真一 佐藤
• 👤 Koji Ozaki
• 👤 浩司 小崎
• 👤 Takahisa Sakaemori
• 👤 貴尚 栄森

Bibliographic Details