Field effect transistor and manufacture of the same

Abstract

Abstract PURPOSE:To relieve a high electric field near a drain and suppress hot electron effect by a method wherein source and drain diffused layers have double diffused layer structures composed of low concentration diffused layers which are close to a gate electrode and high concentration diffused layers which are a little far from the gate electrode. CONSTITUTION:If ions of a single impurity whose conductivity type is opposite to that of a substrate 1 are implanted in a high energy, all the amount is implanted into the substrate 1 in the regions other than a gate electrode 3a and 3b. On the other hand, if the film thickness of the surface side part 3b of the gate electrode which has a brim and the implanted energy are properly coupled with each other, the amount is partially implanted into the substrate 1. As a result, correspondingly to the difference of the implanted quantity of the ions implanted into the substrate 1, low concentration diffused layers 6b and high concentration diffused layers 6a which have different surface concentrations and depths of P-N junctions are formed. As the source and drain regions have double diffused layer structures as described above, control against short channel effect and hot electron effect can be performed easily.

Inventors

• 👤 Shinichi Sato
• 👤 真一 佐藤

Bibliographic Details