Semiconductor integrated circuit

Abstract

Abstract PURPOSE:To increase a switching speed of transistor, by forming a resistor or a p-n diode, which is respectively made of polycrystalline silicon, between emitter and base contact parts in a bipolar transistor region. CONSTITUTION:A collector region 2 is formed on a burial collector layer 1 and a p-type base region 3 is formed in the region 2. N-type polycrystallide silicon 11 and p-type polycrystalline silicon 9 are formed on both of a collector contact 7 and an emitter contact 5, and on a base contact 6, respectively. P-n junctions are formed on the sides near the emitter contact by polycrystalline silicon parts 9 and 11, and are shorted by platinum silicide 12. An oxide film 13 made of polycrystalline silicon prevents platinum silicide from being formed there, and the p-type polycrystal silicon 9 thereunder functions as a resistor for discharging base charges. Since this resistor is formed by using polycrystalline silicon and is formed between emitter and base contacts in the transistor region, no extra area is required for the resistor.

Inventors

• 👤 Mitsuhiro Hamada
• 👤 濱田　満広

Bibliographic Details