Formation of dielectric film

Abstract

Abstract PURPOSE:To form a dielectric film of high quality having high permittivity and generating no deterioration in breakdown strength in the stepped part, by implanting nitrogen ions into the silicon substrate surface through an insulating film for removing the insulating film followed by thermal oxidation of the silicon substrate surface in order to grow an SiON dielectric film on the substrate surface. CONSTITUTION:An SiO2 film 2 for absorbing damage is formed on a silicon substrate 1. Next, nitrogen N<+> ions implanted into the surface part of the silicon substrate 1 through the SiO2 film 2 for absorbing damage in order to form an N<+> implantation layer 3. The SiO2 film 2 for absorbing damage is removed giving no damage on the surface of the substrate 1 for exposing the surface of the silicon substrate 1 having the N<+> implantation layer 3 on the surface part. Next, a silicon oxynitride SiON dielectric film 4 is made to grow by eating the N<+> implantation layer 3 having no damage on the surface of the silicon substrate 1. The whole of the SiON dielectric film 4 formed in this way has a uniform SiON composition having the very finely formed film quality can also obtain high dielectric constant without generating deterioration in dielectric breakdown strength due to difference in level.

Inventors

• 👤 Shiyuuma Eifuku
• 👤 栄福　秀馬
• 👤 Kenichi Hizuya
• 👤 日数谷　健一
• 👤 Yoshimi Shiotani
• 👤 喜美 塩谷

Bibliographic Details