Manufacturing method of thin film transistor

Abstract

Abstract PURPOSE:To simplify the manufacturing processes, by forming patterns of source and drain electrodes and of an ohmic contact layer in self-alignment with a pattern of a light-intercepting layer and utilizing the same mask for patterning an active layer, a gate insulation film and a gate electrode. CONSTITUTION:A tantalum oxide film 2, as a light-intercepting film 2 is patterned by using a photo mask having an opposite pattern to those of source and drain electrodes and of a source bus. The substrate is then exposed to light from the bottom thereof so as to form a resist pattern in self-alignment with the pattern 2 of the tantalum oxide film, The substrate is etched with the resist pattern used as a mask to form the patterns of the source and drain electrodes 3a and 3b and of the source bus. Finally, underlying silicon nitride layer 6', amorphous silicon layer 5' and microcrystal silicon layer 4, are selectively removed using the gate electrode 7 as a mask to obtain patterns of a gate insulation film 6, an active layer 5 and an ohmic contact layer 4. In this manner, the manufacturing processes can be simplified substantially.

Inventors

• 👤 Tsuneo Miyake
• 👤 三宅　常夫
• 👤 Naoya Tsurumaki
• 👤 直哉 鶴巻
• 👤 Akira Matsuno
• 👤 明 松野
• 👤 Toru Nakagawa
• 👤 徹 中川
• 👤 Shuji Masumura
• 👤 増村　修司

Bibliographic Details