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Patent JPS6329940A successfully refreshed from Google Patents.
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JPS6329940A Expired / Lapsed JP ⏱️ 0.0 years remaining

Manufacture of semiconductor device

Assignee: NEC Corp
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Filing: 1986-07-23
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Granted: —
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Expires: 2006-07-23
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Abstract

Abstract PURPOSE:To leave a margin when etching a conductor layer under a mushroom type projecting electrode (a bump), and to prevent the deterioration of yield while improving reliability by using a positive type photo-resist film as a mask forming the bump. CONSTITUTION:The surface of a conductor layer 6 is coated with a positive type photo-resist film 7, and a mushroom type bump 8 connected through a conductor layer 3 and conductor layers 5, 6 is shaped. The photo-resist film 7 is removed, and the conductor layer 6 is gotten rid of by an etchant, using the bump 8 and a photo-resist film 7a as masks to form a conductor layer 6a. The photo-resist film 7a is taken off, and an insulating film 9 is shaped to the exposed surface of the conductor layer 5. An oxidation-resistant and chemical-resistant conductor layer 10 is formed onto the exposed surface of the bump 8, and the insulating film 9 and the conductor layer 5 are removed, employing the bump 8 and the conductor layer 10 as masks. Accordingly, the deterioration of yield on manufacture can be prevented, and the reliability of a semiconductor device can be improved.

Inventors

  • 👤 Yoshiyuki Hirano
  • 👤 平野 芳行

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 02:28
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012

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