Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a low-resistance thin-film extremely easily at a low temperature without elevating a substrate temperature by depositing an amorphous silicon layer containing a microcrystalline silicon layer and annealing the amorphous silicon layer by a laser. CONSTITUTION:The manufacture of a semiconductor device includes a process, in which a thin-film containing a microcrystalline silicon layer as a crystallite is deposited, and a process in which the thin-film is irradiated with laser beams. An amorphous silicon P layer 101 in film thickness of 700Angstrom is deposited on a glass substrate 100 through a plasma CVD method, and a microcrystalline silicon N layer 102 in film thickness of 2300Angstrom is deposited. The microcrystalline silicon N layer 102 is irradiated by using a krypton fluoride excimer laser. Accordingly, since microcrystalline silicon is annealed by the laser, the thin-film having low resistance is formed, thus acquiring the thin-film having high conductivity extremely easily at a low temperature.

Inventors

• 👤 Aki Tanaka
• 👤 田中　亜紀
• 👤 Atsushi Tachika
• 👤 田近　淳
• 👤 Makoto Kamaike
• 👤 蒲池　誠
• 👤 Hiroshi Inagaki
• 👤 宏 稲垣

Bibliographic Details