Formation of electrode wiring

Abstract

Abstract PURPOSE:To set a metallic wiring pattern with section taking tapered mesa shape by a method wherein sidewall films for selective etching process are formed on the sidewalls of masks to further the etching process using the sidewall films. CONSTITUTION:Masks 4 for selective etching process are provided on a metallic thin films while an organic thin film 5 is deposited on the surface of the masks 4 and the metallic thin film 3 in the mask openings. When etching process is performed at this time, in the initial phase of the etching process, the organic thin film 5 is left only on the sidewalls of the mask 4 due to the selective etching process to form so-called sidewalls 6. When the etching process is further continued, the metallic thin film 3 is etched away using the sidewalls 6 as new mask ends. Through these procedures, the shape of metallic wiring patterns can be easily controlled to set the metallic wiring patterns in excellent reproducibility so that the sectional shape may be turned into a tapered mesa shape.

Inventors

• 👤 Hiroshi Imai
• 👤 宏 今井
• 👤 Masabumi Kubota
• 👤 正文 久保田

Bibliographic Details